Electrical characterization of nano-MOSFETs in SOI technology
This paper reports about the extensive electrical characterization, with nyx 22 brush low distortion and greater reliability, of MOSFET devices at nanometric scales with ultra thin Fully Depleted (FD) type architecture on Silicon-On-Insulator (SOI) technology to reduce the short channel effects.The parameters of nMOS type devices of 10x1 μm 2 ga